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Structural, chemical, and electronic modulation in MoS 2 films induced by vdW‐gap molecular confinement. (a) Schematic of the molecule‐confined MoS 2 structure, illustrating the insertion of molecules within the vdW gap. <t>(b)</t> <t>X‐ray</t> <t>diffraction</t> patterns of H 2 O‐MoS 2 and EtOH‐MoS 2 films under different annealing temperatures (RT, 200°C, and 300°C), showing the molecule‐dependent evolution of interlayer spacing. (c) Temperature‐dependent phase transition of EtOH‐MoS 2 from 1T to 2H, identified by Mo 3d XPS spectra. (d) C 1s XPS spectra revealing the presence and chemical state of confined molecules. (e) Surface potential variation measured by KPFM as a function of annealing temperature, showing thermally activated electronic modulation. (f) Work function changes of H 2 O‐ and EtOH‐ MoS 2 films after annealing at 200°C, demonstrating an upward Fermi‐level shift and the associated electron doping effect.
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Structural, chemical, and electronic modulation in MoS 2 films induced by vdW‐gap molecular confinement. (a) Schematic of the molecule‐confined MoS 2 structure, illustrating the insertion of molecules within the vdW gap. <t>(b)</t> <t>X‐ray</t> <t>diffraction</t> patterns of H 2 O‐MoS 2 and EtOH‐MoS 2 films under different annealing temperatures (RT, 200°C, and 300°C), showing the molecule‐dependent evolution of interlayer spacing. (c) Temperature‐dependent phase transition of EtOH‐MoS 2 from 1T to 2H, identified by Mo 3d XPS spectra. (d) C 1s XPS spectra revealing the presence and chemical state of confined molecules. (e) Surface potential variation measured by KPFM as a function of annealing temperature, showing thermally activated electronic modulation. (f) Work function changes of H 2 O‐ and EtOH‐ MoS 2 films after annealing at 200°C, demonstrating an upward Fermi‐level shift and the associated electron doping effect.
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Structural, chemical, and electronic modulation in MoS 2 films induced by vdW‐gap molecular confinement. (a) Schematic of the molecule‐confined MoS 2 structure, illustrating the insertion of molecules within the vdW gap. <t>(b)</t> <t>X‐ray</t> <t>diffraction</t> patterns of H 2 O‐MoS 2 and EtOH‐MoS 2 films under different annealing temperatures (RT, 200°C, and 300°C), showing the molecule‐dependent evolution of interlayer spacing. (c) Temperature‐dependent phase transition of EtOH‐MoS 2 from 1T to 2H, identified by Mo 3d XPS spectra. (d) C 1s XPS spectra revealing the presence and chemical state of confined molecules. (e) Surface potential variation measured by KPFM as a function of annealing temperature, showing thermally activated electronic modulation. (f) Work function changes of H 2 O‐ and EtOH‐ MoS 2 films after annealing at 200°C, demonstrating an upward Fermi‐level shift and the associated electron doping effect.
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Structural, chemical, and electronic modulation in MoS 2 films induced by vdW‐gap molecular confinement. (a) Schematic of the molecule‐confined MoS 2 structure, illustrating the insertion of molecules within the vdW gap. <t>(b)</t> <t>X‐ray</t> <t>diffraction</t> patterns of H 2 O‐MoS 2 and EtOH‐MoS 2 films under different annealing temperatures (RT, 200°C, and 300°C), showing the molecule‐dependent evolution of interlayer spacing. (c) Temperature‐dependent phase transition of EtOH‐MoS 2 from 1T to 2H, identified by Mo 3d XPS spectra. (d) C 1s XPS spectra revealing the presence and chemical state of confined molecules. (e) Surface potential variation measured by KPFM as a function of annealing temperature, showing thermally activated electronic modulation. (f) Work function changes of H 2 O‐ and EtOH‐ MoS 2 films after annealing at 200°C, demonstrating an upward Fermi‐level shift and the associated electron doping effect.
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Structural, chemical, and electronic modulation in MoS 2 films induced by vdW‐gap molecular confinement. (a) Schematic of the molecule‐confined MoS 2 structure, illustrating the insertion of molecules within the vdW gap. <t>(b)</t> <t>X‐ray</t> <t>diffraction</t> patterns of H 2 O‐MoS 2 and EtOH‐MoS 2 films under different annealing temperatures (RT, 200°C, and 300°C), showing the molecule‐dependent evolution of interlayer spacing. (c) Temperature‐dependent phase transition of EtOH‐MoS 2 from 1T to 2H, identified by Mo 3d XPS spectra. (d) C 1s XPS spectra revealing the presence and chemical state of confined molecules. (e) Surface potential variation measured by KPFM as a function of annealing temperature, showing thermally activated electronic modulation. (f) Work function changes of H 2 O‐ and EtOH‐ MoS 2 films after annealing at 200°C, demonstrating an upward Fermi‐level shift and the associated electron doping effect.
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Structural, chemical, and electronic modulation in MoS 2 films induced by vdW‐gap molecular confinement. (a) Schematic of the molecule‐confined MoS 2 structure, illustrating the insertion of molecules within the vdW gap. (b) X‐ray diffraction patterns of H 2 O‐MoS 2 and EtOH‐MoS 2 films under different annealing temperatures (RT, 200°C, and 300°C), showing the molecule‐dependent evolution of interlayer spacing. (c) Temperature‐dependent phase transition of EtOH‐MoS 2 from 1T to 2H, identified by Mo 3d XPS spectra. (d) C 1s XPS spectra revealing the presence and chemical state of confined molecules. (e) Surface potential variation measured by KPFM as a function of annealing temperature, showing thermally activated electronic modulation. (f) Work function changes of H 2 O‐ and EtOH‐ MoS 2 films after annealing at 200°C, demonstrating an upward Fermi‐level shift and the associated electron doping effect.

Journal: Advanced Science

Article Title: Van der Waals Gap‐Confined Molecular Engineering of MoS 2 for Selectivity‐Enhanced and Humidity‐Tolerant Gas Sensing

doi: 10.1002/advs.78072

Figure Lengend Snippet: Structural, chemical, and electronic modulation in MoS 2 films induced by vdW‐gap molecular confinement. (a) Schematic of the molecule‐confined MoS 2 structure, illustrating the insertion of molecules within the vdW gap. (b) X‐ray diffraction patterns of H 2 O‐MoS 2 and EtOH‐MoS 2 films under different annealing temperatures (RT, 200°C, and 300°C), showing the molecule‐dependent evolution of interlayer spacing. (c) Temperature‐dependent phase transition of EtOH‐MoS 2 from 1T to 2H, identified by Mo 3d XPS spectra. (d) C 1s XPS spectra revealing the presence and chemical state of confined molecules. (e) Surface potential variation measured by KPFM as a function of annealing temperature, showing thermally activated electronic modulation. (f) Work function changes of H 2 O‐ and EtOH‐ MoS 2 films after annealing at 200°C, demonstrating an upward Fermi‐level shift and the associated electron doping effect.

Article Snippet: To examine changes in the interlayer spacing and crystallographic structure, x‐ray diffraction (XRD) analysis was conducted using a SmartLab diffractometer (Rigaku) with Cu Kα radiation (λ = 0.15412 nm).

Techniques: Sublimation